论文标题
50V的衰减方案
Decay scheme of 50V
论文作者
论文摘要
调查$^{50} $ v电子推出至$ 2^+$ 1553.8 $^{50} $ ti的keV级别，并搜索$β^ - $β^ - $^{50} $ v to $ 2^+$ 2^+$ 2^+$ 783.3 kev的$^{50} $ cr（这两个decay for for for for for for for for for for for for for to $Δj^{Δπ} = 4^+$）是使用天然同位素丰度的钒样品进行的，质量为955 g。在实验室Hades（比利时）的地下225 m的超低空HPGE检测系统的帮助下进行了测量。电子捕获的$^{50} $ V的半寿命的测量值为$ t^{\ mathrm {ec}} _ {1/2} =（2.77^{+0.20} _ { - 0.19}）\ times 10^{17} $ yr。未检测到$β^ - $ - 衰减分支，半衰期的相应下限为$ t^β_{1/2} \ geq 8.9 \ times 10^{18} $ yr在90 \％置信度下。
Investigation of the $^{50}$V electron-capture to the $2^+$ 1553.8 keV level of $^{50}$Ti and search for $β^-$ decay of $^{50}$V to the $2^+$ 783.3 keV level of $^{50}$Cr (both those decays are fourfold forbidden with $ΔJ^{Δπ}=4^+$) have been performed using a vanadium sample of natural isotopic abundance with mass of 955 g. The measurements were conducted with the help of an ultra low-background HPGe-detector system located 225 m underground in the laboratory HADES (Belgium). The measured value of the half-life of $^{50}$V for electron capture was $T^{\mathrm{EC}}_{1/2}=(2.77^{+0.20}_{-0.19})\times 10^{17}$ yr. The $β^-$-decay branch was not detected and the corresponding lower bound of the half-life was $T^β_{1/2}\geq 8.9\times 10^{18}$ yr at the 90\% confidence level.
