论文标题
磁化剂对磁性拓扑绝缘子中磁性和拓扑阶段的影响
Impact of magnetic dopants on magnetic and topological phases in magnetic topological insulators
论文作者
论文摘要
研究了用随机磁杂质掺杂的拓扑绝缘子。该系统由凯恩 - 梅尔模型建模,并在传导电子和磁性掺杂剂之间随机自旋交换。无序系统的动态平均场理论用于研究电子动力学。在平均场理论中计算了磁长阶和拓扑不变的。它们揭示了丰富的相图,其中不同的磁性长距离顺序(例如抗铁磁或铁磁剂)可以在金属或绝缘阶段中存在,具体取决于电子和磁性杂质填充物。发现绝缘子仅发生在电子半填充,四分之一填充以及电子填充等于磁性杂质填充时。但是,仅在半填充抗铁磁绝缘子和四分之一填充的铁磁绝缘子中观察到非平凡的拓扑。在电子半填充时,对旋转大厅的电导进行了量化,并且在磁性掺杂方面具有鲁棒性,而在电子季度填充时,磁性掺杂剂将铁磁拓扑绝缘子驱动到铁磁金属。仅在电子季度填充和致密的磁掺杂时观察到量子异常的效应。
A topological insulator doped with random magnetic impurities is studied. The system is modelled by the Kane-Mele model with a random spin exchange between conduction electrons and magnetic dopants. The dynamical mean field theory for disordered systems is used to investigate the electron dynamics. The magnetic long-range order and the topological invariant are calculated within the mean field theory. They reveal a rich phase diagram, where different magnetic long-range orders such as antiferromagnetic or ferromagnetic one can exist in the metallic or insulating phases, depending on electron and magnetic impurity fillings. It is found that insulator only occurs at electron half filling, quarter filling and when electron filling is equal to magnetic impurity filling. However, non-trivial topology is observed only in half-filling antiferromagnetic insulator and quarter-filling ferromagnetic insulator. At electron half filling, the spin Hall conductance is quantized and it is robust against magnetic doping, while at electron quarter filling, magnetic dopants drive the ferromagnetic topological insulator to ferromagnetic metal. The quantum anomalous Hall effect is observed only at electron quarter filling and dense magnetic doping.