论文标题
评估高压硅垂直JFET的辐射硬度
Evaluation of Radiation Hardness of High-Voltage Silicon Vertical JFETs
论文作者
论文摘要
将来Atlas Inner Tracker，每个硅条模块都将配备能够将高压电源与传感器分开的开关，以防后者有故障。将开关放置在HV电源和传感器之间，需要在其关闭状态下维持高压，以为传感器泄漏电流提供低电阻路径，并且在ON状态下，辐射高达1.2E15 NEQ/CM2以及其他要求。虽然已选择GAN JFET作为合适的Rad-Hard开关，但Brookhaven国家实验室开发了硅垂直HV-JFET作为替代选择。预辐照结果显示了设备的功能，并证明了硅HV-JFET满足了开关的预辐照要求。为了评估其辐照后的适用性，在Jozef Stefan Institute（JSI，Slovenia）的Jozef Stefan Institute（Slovenia）中，有一些P型HV-JFET被辐照。本文报告了这些辐照设备的静态表征以及用于洞悉辐照行为的物理学的TCAD数值模拟。
In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2e15 neq/cm2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). This paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.
