论文标题
手性界面状态和相关的量化运输量
Chiral Interface States and Related Quantized Transport in Disordered Chern Insulators
论文作者
论文摘要
在这封信中,我们研究了Anderson-Localization诱导的量化Chern绝缘子(CIS)的量化运输。通过研究无序的顺式潜力,我们发现手性界面状态沿步长电位的界面出现,并且可以通过潜在强度来操纵这种量化运输的能量范围。此外,对具有多步电势的病例的数值模拟表明,可以通过改变费米能量来空间移动这种手性状态,并且量化运输的能量窗口大大扩大。在实验上,可以通过施加横向电场来实现此类手性界面状态,其中量化运输的能量窗口比相应CI的固有带隙宽得多。由于CI和正常绝缘体之间的直接相变,这些现象对于无序的顺式而言是非常普遍的。
In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Experimentally, such chiral interface states can be realized by imposing transverse electric field, in which the energy window for quantized transport is much broader than the intrinsic band gap of the corresponding CI. These phenomena are quite universal for disordered CIs due to the direct phase transition between the CI and the normal insulator.