论文标题
在具有低浓度杂质的电导带中电子散射中的非生物效应
Non-Born effects in scattering of electrons in a conducting strip with low concentration of impurities
论文作者
论文摘要
我们将清洁导管的电阻率$ρ$（在我们先前的工作Arxiv：1810.00426中开发）中的非出生效应的理论扩展到``strips'' - 2D导体中的Quasi-One维结构。在这里，原始的范霍夫（Van Hove）的奇异性在$ρ$上对化学势$ \ varepsilon $的位置的依赖性在两个峰上不对称，以吸引杂质。但是，由于在杂质处的散射幅度取决于其位置，因此这些峰不均匀地扩大。由于散射在绝对水平上，最大的扩展发生在左峰会，以吸引杂质。与管子的情况相反，这些水平并不是独特的尖锐线，而是一个相对较宽的杂质带，其下边缘在其下边缘具有弱的准Van Hove特征。 $ρ（\ varepsilon）$的不同部分以不同的杂质组为主导：接近最小有效的散射器，自相矛盾的是``最弱''杂质的杂质 - 这些杂质（这些杂质都接近电子波功能的节点，因此裸露的散射矩阵元素被抑制。左最大值的准Van Hove特征由位于抗雌雄同体附近的最强大的杂质主导。
We extend the theory of non-Born effects in resistivity $ρ$ of clean conducting tubes (developed in our previous work arXiv:1810.00426) to ``strips'' -- quasi-one-dimensional structures in 2D conductors. Here also an original Van Hove singularity in dependence of $ρ$ on the position of chemical potential $\varepsilon$ is asymmetrically split in two peaks for attracting impurities. However, since amplitudes of scattering at impurities depend on their positions, these peaks are inhomogeneously broadened. Strongest broadening occurs in the left peak, arising, for attracting impurities, due to scattering at quasistationary levels. In contrast with the case of tube these levels form not a unique sharp line, but a relatively broad impurity band with a weak quasi-Van Hove feature on its lower edge. Different parts of $ρ(\varepsilon)$ are dominated by different groups of impurities: close to the minimum the most effective scatterers, paradoxically are the ``weakest'' impurities -- those, located close to nodes of the electronic wave-function, so that the bare scattering matrix elements are suppressed. The quasi-Van Hove feature at left maximum is dominated by strongest impurites, located close to antinodes.
