论文标题
应变对散布石墨烯中带工程的影响
Effect of Strain on Band Engineering in Gapped Graphene
论文作者
论文摘要
我们研究了受外部来源的菌株对间隙石墨烯中带工程的影响。通过应用Floquet理论，我们确定电子的有效哈密顿量在沿着扶手椅和锯齿形方向存在菌株的情况下，由线性，圆形和椭圆极化的梳妆场穿着。我们的结果表明，能量光谱表现出不同的对称性，对于无应变情况，无论辐照强度的值如何，它都会形成各向同性和各向异性的形式，而在原始石墨烯的情况下，它是线性的。当沿着扶手椅方向施加应变时，它会缓慢增加，但迅速用于锯齿形案例。此外，发现与线性和圆形极化相比，其值相反变化的线性和圆极化相比，重新归一化的带隙会沿不同的应变幅度变化，并且在极化相$θ$中不会改变。
We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically polarized dressing field in the presence of strain along armchair and zigzag directions. Our results show that the energy spectrum exhibits different symmetries and for the strainless case it takes an isotropic and anisotropic forms whatever the values of irradiation intensity, whereas it is linear as in the case of pristine graphene. It increases slowly when strain is applied along the armchair direction but rapidly for the zigzag case. Moreover, it is found that the renormalized band gap changes along different strain magnitudes and does not change for the polarization phase $θ$ compared to linear and circular polarizations where its values change oppositely.
