论文标题
晶体取向超宽带的外观5.4-8.6 ev $α$ - （alga）$ _ 2 $ o $ $ _3 $在M-Plane Sapphire上
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire
论文作者
论文摘要
超宽的带隙半导体正在迎来下一代高功率电子设备。正确的晶体取向可以使或破坏此类半导体的成功外观。在这里发现，$α$ - （藻）的单晶层$ _ 2 $ o $ _3 $合金跨度为5.4-8.6 eV，可以通过分子束外观的外观增长。发现关键步骤是使用M平面蓝宝石晶体。外延层从$α$ - 到较窄的带隙$β$ - 相的相变是由晶体的C平面催化的。由于c平面与晶体的M平面表面的生长前部是正交的，因此消除了较窄的带隙途径，从而揭示了通往具有结构纯度的较宽带隙材料的途径。外延层的产生能量带镜范围超出了所有其他半导体家族的范围，预示着迄今为止最大的带隙材料家族的成功外延稳定。
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.
