论文标题
均匀晶体的形成和减少HFZRO $ _2 $铁电记忆的电气变化
Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering
论文作者
论文摘要
在本文中，我们在HF $ _ {0.5} $ zr $ _ {0.5} $ o $ $ _2 $基于大型铁电域获得的基于大型铁电域获得的基于大型铁电域获得的巨大变化控制。 10nm厚的hf $ _ {0.5} $ zr $ _ {0.5} $ o $ $ _2 $的基于锡作为底部和顶部电极的铁电容器是制造和表征的。快速热退火（RTA）的持续时间有所不同，以观察其对700C时晶体形成和装置电气性能的影响。通过增加RTA持续时间，分别增加了RTA持续时间。高分辨率透射电子显微照片清楚地显示了RTA为180秒的大型和均匀的铁电域。 RTA的延长持续时间可能允许形成均匀的晶体，从而减轻铁电和副域分布的随机性，并且已经注入了确定性切换。此改进为实施HF $ _ {0.5} $ zr $ _ {0.5} $ o $ $ _2 $基于内存和陡坡设备应用程序的深度缩放设备铺平了道路。
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric capacitors with TiN as bottom and top electrodes are fabricated and characterized. The duration of rapid thermal annealing (RTA) is varied to observe its effect on crystal formation and device electrical properties at 700C. The device to device variation in terms of coercive voltage and peak capacitance are reduced from 0.4V to 0.01V and from 2*$10^{-5}$nF/cm$^2$ to 4*$10^{-6}$nF/cm$^2$, respectively, by increasing the RTA duration. High resolution transmission electron micrograph clearly shows large and uniform ferroelectric domains with RTA of 180 seconds. Extended duration of RTA likely allows uniform crystal to form, which mitigates the stochasticity of the distribution of ferroelectric and paraelectric domains, and deterministic switching has been infused. This improvement paves the way for implementing Hf$_{0.5}$Zr$_{0.5}$O$_2$ based deeply scaled devices for memory and steep slope device applications.
