论文标题
单，双层和三层MOS2，Mose2，WS2和WSE2中的应变工程
Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
论文作者
论文摘要
应变是一种强大的工具，可以改变半导体过渡金属二分法的光学特性，例如MOS2，MOSE2，WS2和WSE2。在这项工作中，我们提供了对这些二维半导体单轴应变测量的技术细节的详尽描述，我们提供了一种直接的校准方法，以高精度确定所施加的应变量。然后，我们采用反射光谱来分析单，双层和三层MOS2，Mose2，WS2和WSE2的电子性质的应变可调节性。最后，我们通过分析15个不同的单层MOS2薄片来量化薄片 - 薄片变异性。
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.
