论文标题
CMOS光子学的二维极端皮肤深度工程
Two-dimensional extreme skin depth engineering for CMOS photonics
论文作者
论文摘要
极端的皮肤深度工程（E-SKID）可以应用于集成的光子学以操纵波导的evanscent场。在这里，我们证明可以在两个方向上实现电子基础，以确定evanevanscent Wave，允许与增强功能的密集整合。特别是，通过增加皮肤深度，我们可以创建具有较大操作带宽的大间隙，无弯曲的方向耦合器。在这里，我们在实验中验证了CMOS光子铸造中的二维E-SKID，以表现出与1.44μm的GAP相结合。
Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap, bendless directional couplers with large operational bandwidth. Here we experimentally validate two-dimensional e-skid for integrated photonics in a CMOS photonics foundry and demonstrate strong coupling with a gap of 1.44 μm.
