论文标题
识别两个捕获机制，负责SIO $ _2 $/4H-SIC MOSFET的阈值电压变化
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs
论文作者
论文摘要
基于循环门偏置应力的非弹药方法用于探测整个4H-SIC频段间隙的SIO $ _2 $ _2 $/4H-SIC系统中的界面或接近接口陷阱。研究了侧向MOSFET中阈值电压的温度依赖性不稳定，并发现了两个分离的捕获机制。一种机制几乎与温度无关，并且与近界面氧化陷阱的存在相关，这些界面被从半导体中捕获。活化能为0.1 eV的第二种机制与SIO $ _2 $/4H-SIC接口处的固有缺陷的存在相关。
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in lateral MOSFETs is investigated and two separated trapping mechanisms were found. One mechanism is nearly temperature independent and it is correlated to the presence of near interface oxide traps that are trapped via tunneling from the semiconductor. The second mechanism, having an activation energy of 0.1 eV, has been correlated to the presence of intrinsic defects at the SiO$_2$/4H-SiC interface.
