论文标题
纳米胶质AL2O3/HFO2基于碳化硅的设备的电介质
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
论文作者
论文摘要
纳米胶质的Al2O3/HFO2薄膜以及单个Al2O3和HFO2层已通过血浆增强的原子层沉积（Peald）技术在硅（4H-SIC）底物上生长为栅极介质。所有这三个介电膜都在温度低至250°C的温度下沉积，总厚度约为30 nm，尤其是纳米胶质的AL2O3/HFO2膜已通过交替的纳米含量Al2O3和HFO2层制造。已经评估了纳米胶质AL2O3/HFO2膜的结构特性和介电特性，并将其与母体AL2O3和HFO2单层的结构特性和比较。此外，已经研究了800°C退火处理后的结构特性及其演变，以作为其在设备制造流程中实施的预先测试。在收集的数据的基础上，与简单的氧化物层相对于简单的氧化物具有有希望的介电行为。
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on silicon carbide (4H-SiC) substrates. All the three dielectric films have been deposited at temperature as low as 250°C, with a total thickness of about 30 nm and in particular, the nanolaminated Al2O3/HfO2 films have been fabricated by alternating nanometric Al2O3 and HfO2 layers. The structural characteristics and dielectrical properties of the nanolaminated Al2O3/HfO2 films have been evaluated and compared to those of the parent Al2O3 and HfO2 single layers. Moreover, the structural properties and their evolution upon annealing treatment at 800°C have been investigated as preliminar test for their possible implementation in the device fabrication flow-chart. On the basis of the collected data, the nanolaminated films demonstrated to possess promising dielectric behavior with respect to the simple oxide layers.
