论文标题
van der waals 1T-VSE $ _2 $层的相干生长和表征使用分子束外延（111）b（111）b
Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy
论文作者
论文摘要
我们报告了通过分子束外观上的八面体配位（1T）结构中二叶发展式（1T）结构中菜籽硅胶（VSE $ _2 $）薄膜的外延生长。显示了最高30 mL的单个单层（ML）的膜厚度。使用X射线衍射，透射电子显微镜，扫描隧道显微镜和X射线光电子光谱的结构和化学研究表明高质量的薄膜。进一步的研究表明，GAAS上的单层VSE $ _2 $胶片不是空气稳定的，并且在几个小时内容易受到氧化的影响，这表明应将保护性封盖层用于设备应用。这项工作表明，可以通过2D/3D混合设备的外延生长将VSE $ _2 $（用于可能的Spintronic和电子应用的候选范德华材料）与III-V半导体集成。
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
