论文标题
稀释的磁性半导体中，下一个最邻居跳跃对铁磁磁性的影响
Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors
论文作者
论文摘要
在所有稀释的磁性半导体中，发现最高的铁磁过渡温度$ t_c $ \ sim $ 940 k，成为宽带隙系统，引起了人们的极大兴趣。后来，由于观察到非常低的$ t_c $ $ \ sim $ 8 K或有时根本没有铁磁状态的铁磁状态，因此它成为一场辩论。我们通过在$ t-t'$ kondo lattice型号中使用旋转弗里米安·蒙特 - 卡洛方法计算$ t-t'$ kondo晶格模型来解决这些问题，$ t_c $ vs $ p $。我们利用了$ t'$的下一个邻居跳跃，以调整自由承运人的离域化程度，并表明载体定位（离定位）显着扩大（缩水）铁磁窗口，并减少了最佳$ T_C $的降低（增强）。我们将结果与实验结果联系起来，并试图了解甘恩（Gamnn）的铁磁磁性的歧义。
Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating the ferromagnetic window, $T_C$ Vs $p$, within a $t-t'$ Kondo lattice model using a spin-fermion Monte-Carlo method on a simple cubic lattice. We exploit the next-nearest-neighbor hopping $t'$ to tune the degree of delocalization of the free carriers and show that carrier localization (delocalization) significantly widen (shrunken) the ferromagnetic window with a reduction (enhancement) of the optimum $T_C$. We connect our results with the experimental findings and try to understand the ambiguities in ferromagnetism in GaMnN.
