论文标题
不同前体对二硫钼的CVD生长的影响
Effect of different precursors on CVD growth of molybdenum disulfide
论文作者
论文摘要
控制化学蒸气沉积（CVD）生长钼（MOS2）薄片的厚度，大小和面积的控制对于设备应用至关重要。本文中，我们报告了使用三种不同的前体，即三种不同的前体，三氧化物钼（MOO3），七豆茶（AHM）和Tellurium（TE）的SiO2/Si底物上CVD合成的定量比较。提出了MOO3微晶的MOS2进化的三步化学反应机理，以用于MOO3前体。此外，基于生长温度和前体量之比的策略是系统地控制MOS2薄片的厚度和面积的策略。我们的发现表明，对于大型晶体单层MOS2薄片，MOO3比Ahm和TE辅助合成更好。此外，TE作为增长促进剂可以降低250℃的生长温度。这项研究可进一步用于制造基于MOS2的高性能电子设备，例如光电检测器，薄膜晶体管和传感器。
Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A three-step chemical reaction mechanism of evolution of MoS2 from MoO3 micro-crystals is proposed for MoO3 precursor. Furthermore, a strategy based on growth temperature and ratio of amount of precursors is developed to systematically control thickness and area of MoS2 flakes. Our findings show that for large-sized crystalline monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temperature by 250C. This study can be further used to fabricate MoS2 based high-performance electronic devices such as photodetectors, thin film transistors, and sensors.
