论文标题
跨磁纳米线的域壁动力学，垂直磁各向异性
Domain wall dynamics in stepped magnetic nanowire with perpendicular magnetic anisotropy
论文作者
论文摘要
进行微磁模拟以研究具有垂直磁各向异性（PMA）的纳米线中电流驱动的结构域壁（DW）。提出了阶梯纳米线来固定DW并基于每个细胞方案的多位数实现高信息存储能力。发现DW速度增加了较厚，较窄的纳米线。为了从阶梯区域中滴下DW，研究了当前的密度JDEP，重点是设备几何形状和材料的内在特性。可以在分析上确定JDEP，这是纳米激素维度和纳米线厚度的函数。此外，发现JDEP呈指数依赖于各向异性能量和饱和磁化，因此在调整记忆应用程序的写作电流方面具有更大的灵活性。
Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy (PMA). A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multi-bit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and materials intrinsic properties. The Jdep could be analytically determined as a function of the nanocontriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.
