论文标题
磁场依赖性开路电压滞后的起源是由横向电荷电流驱动的。
Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures
论文作者
论文摘要
对AU薄膜的最新实验工作表明，通过开路电压测量值，电流电流诱导的自旋极化的迹象。在这项研究中，我们正在研究诱导AU设备中该测得的信号的潜在机制。我们从Rashba-Edelstein效应和散装旋转厅效应中确定理论上预期的自旋极化。与实验数据相比，在两种情况下，测得的信号缩放的差异是Au薄膜厚度的函数，这是分化这两种效应的关键。实验表明，在临界厚度下，自旋极化的逆转揭示了多种自旋极化机制的存在。 Rashbaedelstein和自旋大厅效应的特征都在不同的厚度方向上观察到。此外，我们研究了相同的AU样品的磁性，该样品揭示了低厚度样品在低温下存在弱反定位（WAL）。更有趣的是，据显示，由于WAL引起的开路电压差异和磁化值与膜的厚度和温度非常相似，这表明旋转轨道相互作用在理解现象时至关重要。
Recent experimental work on Au thin films demonstrated signs of charge current-induced spin polarization through open circuit voltage measurements. In this study, we are investigating the underlying mechanism(s) that induces this measured signal in the Au devices. We determine the theoretically expected spin polarization from both Rashba-Edelstein effect and bulk spin Hall effect. The discrepancy in the scaling of the measured signal as a function of the thickness of the Au thin film in the two cases is our key to differentiate between the two effects when compared to experimental data. Experiments show reversal of spin polarization at a critical thickness which reveals the presence of multiple spin polarization mechanisms. Characteristics of both RashbaEdelstein and spin Hall effects are observed in different thickness regimes. In addition, we study the magnetoresistance of the same Au samples, which reveal the presence of weak anti-localization (WAL) at low temperatures for the low-thickness samples. More interestingly, it is revealed that the open circuit voltage difference and magnetoresistance due to WAL have very similar scaling with film thickness and temperature, suggesting the crucial importance of spin-orbit interaction in understanding the phenomenon.
