论文标题
具有非线性介电设备中侧载体密度曲线的静电调制
Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics
论文作者
论文摘要
我们研究了在非线性介电环境中静电门控对二维设备中电荷载体横向分布的影响。我们使用Thomas-Fermi近似来计算电荷分布，以建模系统的静电。与设备中心相比，栅极生成的电场线聚焦在设备的边缘上，导致边缘附近的耗竭增加。这种效果在很大程度上取决于设备的尺寸以及底物的非线性介电常数。我们使用扫描超导体干扰装置（Squid）显微镜图像进行实验证明了这种效果，该图像是封闭式Laalo $ _3 $/srtio $ _3 $杂质结构中当前分布的图像。
We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO$_3$/SrTiO$_3$ heterostructures.
