论文标题
半导体量子量子原
Semiconductor quantum plasmonics
论文作者
论文摘要
我们研究了高度掺杂的半导体层中的经典和量子质子对的边界。用于我们的研究的半导体平台而不是金属的选择可以准确描述构成等离子响应的电子的量子性质，这是量子等离子体的至关重要的要求。我们的量子模型使我们能够从由任意的一维电位确定的电子状态中计算出集体等离子共振。我们的方法用实验光谱证实，在单个量子井上实现，其中存在较高的纵向等离子模式。我们证明它们的能量取决于血浆能量，因为金属也是这种情况，也取决于组成电子的大小约束。这项工作为量子工程技术在半导体等离震源方面的适用性开辟了道路。
We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the electrons constituting the plasmonic response, which is a crucial requirement for quantum plasmonics. Our quantum model allows us to calculate the collective plasmonic resonances from the electronic states determined by an arbitrary one-dimensional potential. Our approach is corroborated with experimental spectra, realized on a single quantum well, in which higher order longitudinal plasmonic modes are present. We demonstrate that their energy depends on the plasma energy, as it is also the case for metals, but also on the size confinement of the constituent electrons. This work opens the way towards the applicability of quantum engineering techniques for semiconductor plasmonics.
