论文标题
二维电子气中的低场运输计算$ \ mathrm {β\ mbox { - }（al_ {x} ga__ {1-x}）_ {2} o_ {3}/ga_ {3}/ga_ {2} o_ {2} o_ {3}}
Low field transport calculations in 2-dimensional electron gas in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures
论文作者
论文摘要
$ \mathrmβ$ -gallium氧化物（$ \ mathrm {β\ mbox { - } ga_ {2} o_ {3}} $）是一种新兴的宽带gap半导体，用于潜在的幂和RF电子应用。在$ \ mathrm {β\ mbox { - }（al_ {x} ga_ {1-x}）_ {2} o_ {2} o_ {3}/ga_ {2}/ga_ {2} o_ {2} o_ {3} o_ {3}} $ heteros结构上的初步传递。但是，实验结果没有接近预测的迁移率值。在这项工作中，我们执行更全面的计算，以研究$ \ mathrm {β\ mbox { - }（al_ {x} ga__ {1-x}）_ {2} o_ {2} o_ {3}/ga_ {3}/ga_ {2} o__ {2} o_ {3} o_ {3} {3}} $ HETEROSSTRUTION的低场2DD型传输属性。异质结构的自洽泊松式Schrodinger模拟用于获得子带能量和波形。假设在特定方向上限制的电子结构，并且语音色散是根据DFT和DFPT框架下的第一个原理方法计算的。为了简单起见，不考虑声子限制。计算中包含的不同散射机制是声子（极性和非极性），远程杂质，合金和界面 - 连锁度。我们包括全动态筛选极性光学声子筛选。我们报告了依赖温度的低场电子迁移率。
$\mathrmβ$-Gallium oxide ($\mathrm{β\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.
