论文标题
INSE：具有较高灵活性的二维半导体
InSe: a two-dimensional semiconductor with superior flexibility
论文作者
论文摘要
二维硒化（INSE）由于其高电荷载体的迁移率和电子和光电田领域的光反应，最近引起了广泛的关注。然而，尚未研究该材料在超薄政权中的机械性能。在这里，我们介绍了通过使用基于屈曲的方法来确定薄INSE（〜1-2层至〜40层）薄片的Young模量的努力。我们发现，年轻的模量的值为23.1 +-5.2 GPA，这是晶体二维材料最新的最低值之一。这种卓越的灵活性对于不同的应用，例如应变工程和灵活的电子产品可能非常有吸引力。
Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.
