论文标题
过渡金属二甲基元素磁化磁性绝缘体异质结构中的高温异常霍尔效应
High-temperature Anomalous Hall Effect in Transition Metal Dichalcogenide-Ferromagnetic Insulator Heterostructure
论文作者
论文摘要
在铁磁材料（FM）上的过渡金属二分法（TMDS）的整合可能会产生引人入胜的物理和对电子和自旋应用的希望。在这项工作中，通过将其沉积在铁磁绝缘子YIG（Y3FE5O12，Yttrium Iron Garnet）上，使用异质结构方法在TMD ZRTE2薄膜中使用高温异常霍尔效应（AHE）。在此异质结构中，可以在至少400 K的温度下观察到明显的异常霍尔效应，这是TMD中观察AHE的创纪录的高温，并且大的RAHE比以前在拓扑绝缘子或基于TMDS基于TMDS基于拓扑的杂物中所报道的值大于一个数量级。据信，Yig和Zrte2之间界面反应诱导的ZRO2的磁化被认为对ZRTE2中诱导的高温异常霍尔效应起着至关重要的作用。这些结果揭示了一个有希望的室温Spintronic设备应用的系统，并且考虑到ZRTE2中非平凡拓扑的预测，它也可能为在较高温度下引入磁性并在较高温度下探索磁性的新途径。
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures. The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2.
