论文标题

用钒掺杂剂的能剂掺杂剂中的远距离磁性的巡回孔的证据

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

论文作者

Song, Bumsub, Yun, Seok Joon, Jiang, Jinbao, Beach, Kory, Choi, Wooseon, Kim, Young-Min, Terrones, Humberto, Song, Young Jae, Duong, Dinh Loc, Lee, Young Hee

论文摘要

稀释的磁性半导体(DMS)的一个主要关注点是如何建立具有低磁掺杂浓度的远程磁序以维持宿主半导体的栅极可调性,以及升高居里温度。最近已经研究了二维范德华半导体,以证明DMS中的磁顺序。然而,尚未实现对DMS中可拨打可调远程磁性的机制的全面理解。在这里,我们介绍了一个单层杜松子钨(WSE2)半导体,该半导体用V掺杂剂介绍了通过巡回的自旋极孔的远距离磁性。 V原子通过替换W原子稀疏地位于宿主晶格中,通过扫描隧道显微镜和高分辨率透射电子显微镜证实,这可以证实。 V杂质状态和价带边缘状态重叠,这与密度功能理论计算一致。现场效应的晶体管特征揭示了杂交带中的巡回孔;这显然类似于齐纳模型。我们的研究深入了解了V型WSE2中远程磁性的机制,该机理也可用于其他磁性半导体过渡金属二核苷。

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

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