论文标题
使用内置屏障探测INAS纳米线的接近性诱导超导性
Probing proximity induced superconductivity in InAs nanowire using built-in barriers
论文作者
论文摘要
超导体 - 纳米线混合设备中的结合状态发挥着核心作用，携带信息在地面状态特性（shiba或andreev state）或TheSystem（Majorana State）的拓扑特性上。这种结合状态的光谱依赖于通常由门电极定义的明确定义的隧道屏障的形成，这导致了光滑的隧道屏障。在此，我们使用了在生长过程中嵌入INAS纳米线的薄INP段，以使其在forma sapl shrow sharp sharp内置隧道屏障。栅极依赖性和热激活测量已被用来确认并估计该屏障的高度。通过将这些电线耦合，我们已经研究了纳米线段中诱导的间隙的栅极电压依赖性，我们可以使用基于Andreev Boundstates的简单模型来理解它们。我们的结果表明，作为未来的光谱工具，这些内置障碍很有希望
Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools
