论文标题
$ _4 $ SE $ _3 $晶体中电导率的频率依赖性
Frequency dependence of conductivity in the layered In$_4$Se$_3$ crystals
论文作者
论文摘要
研究了氮气温度区域中电导率在$ _4 $ SE $ _3 $中的频率依赖性。据发现，费米水平附近局部水平上的可变长度跳跃是晶体中电荷转移的前主导机制。对于$ _4 $ se $ _3 $ crystals的纯度，本地化状态的密度为$ 10^{17} -10^{18} $ ev $^{ - 1} \ cdot $ cm $ cm $^{ - 3} $，平均跳高长度为220---350。在分层晶体的模型中将出现局部状态的原因视为准排序系统。
The frequency dependence of conductivity in In$_4$Se$_3$, pure and with copper admixture crystals, in the region of nitrogen temperatures is investigated. It was found out that variable length hops on the localized levels in the vicinity of Fermi level is pre-dominant mechanism of charge transfer in the crystals. For pure In$ _4$Se$ _3$ crystals the density of localized states is $10^{17}-10^{18}$ eV$^{-1}\cdot$cm$^{-3}$, the mean hop length is 220--350 Å. The reasons for the occurrence of localized states are considered within the model of a layered crystal as a quasi-disordered system.
