论文标题

高度自旋极化隧道的电动力学约瑟夫森连接

Electrodynamics of highly spin-polarized tunnel Josephson junctions

论文作者

Ahmad, H. G., Caruso, R., Pal, A., Rotoli, G., Pepe, G. P., Blamire, M. G., Tafuri, F., Massarotti, D.

论文摘要

超导电子设备的持续发展鼓励了基于超导体/超导剂/Ferromagnet/超导体(SFS)异质结构的杂化Josephson连接(JJS)的多项研究,作为量子和经典环路中的Spintronic设备或可切换元件。宏观量子隧穿的最新实验证据和在隧道 - 有效自旋滤波器JJ中的不完全0-PI转变可能会增强SFS JJS的能力,也可以作为主动元素。在这里,我们提供了NBN/GDN/NBN旋转滤波器JJS的自洽的电动力表征,这是屏障厚度的函数,从而使由于环境与固有的低频耗散过程相关的高频耗散效应。 The fitting of the IV characteristics at 4.2K and at 300mK by using the Tunnel Junction Microscopic model allows us to determine the subgap resistance Rsg, the quality factor Q and the junction capacitance C. These results provide the scaling behavior of the electrodynamic parameters as a function of the barrier thickness, which represents a fundamental step for the feasibility of tunnel ferromagnetic JJs as active elements in classical and量子电路,对于传统的SIS JJ以外的隧道连接具有一般性的兴趣。

The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or switchable elements in quantum and classical circuits. Recent experimental evidence of macroscopic quantum tunneling and of an incomplete 0-pi transition in tunnel-ferromagnetic spin-filter JJs could enhance the capabilities of SFS JJs also as active elements. Here, we provide a self-consistent electrodynamic characterization of NbN/GdN/NbN spin-filter JJs as a function of the barrier thickness, disentangling the high-frequency dissipation effects due to the environment from the intrinsic low-frequency dissipation processes. The fitting of the IV characteristics at 4.2K and at 300mK by using the Tunnel Junction Microscopic model allows us to determine the subgap resistance Rsg, the quality factor Q and the junction capacitance C. These results provide the scaling behavior of the electrodynamic parameters as a function of the barrier thickness, which represents a fundamental step for the feasibility of tunnel ferromagnetic JJs as active elements in classical and quantum circuits, and are of general interest for tunnel junctions other than conventional SIS JJs.

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