论文标题
双极量子点中的单一付费职业
Single-charge occupation in ambipolar quantum dots
论文作者
论文摘要
我们通过电荷传感展示了硅二极管量子点的单一电荷占用。我们已经在硅金属 - 氧化物 - 轴导剂异质结构中制造了双极量子点（QD）设备，该结构包括单孔晶体管旁边的单电子晶体管。可以将两个QD调谐到另一个QD的同时感知电荷过渡。我们通过主动电荷感应进一步检测了双极装置QD中的少数电子和少量孔状态。
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.
