论文标题
从弱间接到原子薄膜中的激子的跨界
Crossover from weakly indirect to direct excitons in atomically thin films of InSe
论文作者
论文摘要
我们对薄膜的平面内极化和封装环境的影响，对INSE的最低能量和激发态的光谱进行了$ \ MATHBF {K \ CDOT P} $理论分析。对于较薄的膜，激动子在动量空间中的最低能量状态是弱间接的，其分散显示了最小值，这是由于数量依赖性的波浪数，这是由于Inse膜的相对平坦最高价带的倒置边缘，Inse膜的最高价频带分支的倒下边缘，我们从动量型激活了Exciton Exciton Exciton Eccipiton Intect of Moment the Exciton Intect the Bright of the Bright of the Bright of Bright of the Bright of the Bright of Bright of the Bright of the Bright of Bright of the Bright。对于$ _2 $ SE $ _2 $层中超过七个以上的电影，激子分散量最小转移到$γ$ - 点。
We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion showing minima at a layer-number-dependent wave number, due to an inverted edge of a relatively flat topmost valence band branch of the InSe film spectrum and we compute the activation energy from the momentum dark exciton ground state into the bright state. For the films with more than seven In$_2$Se$_2$ layers, the exciton dispersion minimum shifts to $Γ$-point.
