论文标题
二维Janus半导体Fe2cl3i3中的抗铁磁和电化状态
Antiferromagnetic and Electric Polarized States in Two-Dimensional Janus Semiconductor Fe2Cl3I3
论文作者
论文摘要
具有镜子不对称的二维(2D)Janus半导体可以引入新的特性,例如大型自旋轨道耦合(SOC)和正常的压电极化,这对其潜在应用引起了极大的兴趣。受到最近制造的2D铁磁(FM)半导体CRI3的启发,稳定的2D(以X-Y平面)抗铁磁磁性(AFM)Janus半导体Fe2cl3I3具有正常的sublattice磁化(M // Z),由密度功能理论计算获得。通过施加拉伸应变,会顺序出现四个磁状态:具有sublattice m // z的AFM,带有sublattice的m // xy的AFM,带有m // xy的FM和带有m // z的FM。由应变驱动的这种新型磁相图可以通过自旋旋转相互作用(包括与单离子各向异性的第三个最近的邻居跳跃相互作用)充分理解,其中发现I Atoms的SOC扮演着重要的作用。另外,由于反转对称性破裂,Fe2Cl3i3的电偏振与应变保持在一起。我们的结果预测了稀有的Janus材料FE2CL3I3,这是带自旋和电荷极化的2D半导体的一个例子,并揭示了高度敏感的应变控制的磁状态和磁化方向,该方向突出了2D磁性Janus半导体作为设计旋转材料的新平台。
Two-dimensional (2D) Janus semiconductors with mirror asymmetry can introduce novel properties, such as large spin-orbit coupling (SOC) and normal piezoelectric polarization, which have attracted a great interest for their potential applications. Inspired by the recently fabricated 2D ferromagnetic (FM) semiconductor CrI3, a stable 2D (in x-y plane) antiferromagnetic (AFM) Janus semiconductor Fe2Cl3I3 with normal sublattice magnetization (m//z) is obtained by density functional theory calculations. By applying a tensile strain, the four magnetic states sequentially occur: AFM with m//z of sublattice, AFM with m//xy of sublattice, FM with m//xy, and FM with m//z. Such novel magnetic phase diagram driven by strain can be well understood by the spin-spin interactions including the third nearest-neighbor hoppings with the single-ion anisotropy, in which the SOC of I atoms is found to play an essential role. In addition, the electric polarization of Fe2Cl3I3 preserves with strain due to the broken inversion symmetry. Our results predict the rare Janus material Fe2Cl3I3 as an example of 2D semiconductors with both spin and charge polarizations, and reveal the highly sensitive strain-controlled magnetic states and magnetization direction, which highlights the 2D magnetic Janus semiconductor as a new platform to design spintronic materials.